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INTEGRATED CIRCUITS
DATA SHEET
CGY2013G GSM 4 W power amplifier
Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
FEATURES * Power Amplifier (PA) overall efficiency 52% * 35.5 dB gain * 0 dBm input power * Gain control range >55 dB * Low output noise floor of PA < -130 dBm/Hz in GSM RX band * Wide operating temperature range -20 to +85 C * LQFP 48 pin package * Compatible with power ramping controller PCF5077 * Compatible with GSM RF transceiver SA1620. APPLICATIONS * 880 to 915 MHz hand-held transceivers for E-GSM applications * 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters "AC characteristics" and "DC characteristics". ORDERING INFORMATION TYPE NUMBER CGY2013G PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature - - - -20 MIN. TYP. 3.6 2.4 35.5 - GENERAL DESCRIPTION
CGY2013G
The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
MAX. - - - +85
UNIT V A dBm
C
VERSION SOT313-2
1998 Jan 23
2
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
BLOCK DIAGRAM
CGY2013G
handbook, full pagewidth
VDD1 29
VDD2 33
VDD3 42 18 SENSOR DRIVER
DETO/VDD5
RFI
27
5,6,7,8
RFO/VDD4
CGY2013G
(1)
31 GND VGG1
19
MGD627
VGG2
(1) Ground pins 1 to 4, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
Fig.1 Block diagram.
PINNING SYMBOL GND RFO/VDD4 GND DETO/VDD5 VGG2 GND RFI GND VDD1 GND VGG1 GND VDD2 GND VDD3 GND 1998 Jan 23 PIN 1 to 4 5 to 8 9 to 17 18 19 20 to 26 27 28 29 30 31 32 33 34 to 41 42 43 to 48 ground power amplifier output and fourth stage supply voltage ground power sensor output and supply voltage fourth stage negative gate supply voltage ground power amplifier input ground first stage supply voltage ground first three stages negative gate supply voltage ground second stage supply voltage ground third stage supply voltage ground 3 DESCRIPTION
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
CGY2013G
46 GND
38 GND
41 GND
45 GND
40 GND
39 GND
48 GND
37 GND
44 GND
43 GND
47 GND
handbook, full pagewidth
42 VDD3
GND GND GND GND RFO/VDD4 RFO/VDD4 RFO/VDD4 RFO/VDD4 GND
1 2 3 4 5 6 7 8 9
36 GND 35 GND 34 GND 33 VDD2 32 GND
CGY2013G
31 VGG1 30 GND 29 VDD1 28 GND 27 RFI 26 GND 25 GND
GND 10 GND 11 GND 12
GND 21
DETO/VDD5 18
VGG2 19
GND 22
GND 13
GND 14
GND 15
GND 16
GND 17
GND 20
GND 23
GND
24
MGD628
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION Operating conditions The CGY2013G is designed to meet the European Telecommunications Standards Institute (ETSI) GSM documents, the "ETS 300 577 specification", which are defined as follows: * ton = 542.8 s * T = 4.3 ms * Duty cycle = 1/8. The device is specifically designed for pulse operation allowing the use of a LQFP48 plastic package.
Power amplifier The power amplifier consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply. The amplifier bias is set using a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress for the amplifier.
1998 Jan 23
4
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
CGY2013G
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL VDD VGG Tj(max) Tstg Ptot positive supply voltage negative supply voltage maximum operating junction temperature IC storage temperature total power dissipation PARAMETER - - - - - MIN. 7 -10 150 150 1.5 MAX. V V C C W UNIT
THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c Note 1. This thermal resistance is measured under GSM pulse conditions. DC CHARACTERISTICS VDD = 3.6 V; Tamb = 25 C; general operating conditions applied; peak current values during burst; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER thermal resistance from junction to case; note 1 VALUE 25 UNIT K/W
Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD IDD positive supply voltage positive peak supply current 0 - - - - 3.6 2.4 -1.8 -1.8 2.5 5.5 3.0 - - 5 V A
Pins VGG1 and VGG2 VGG1 VGG2 IGG1 + IGG2 Note 1. The negative bias VGG1 and VGG2 must be applied 10 s before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. negative supply voltage negative supply voltage negative peak supply current note 1 note 1 V V mA
1998 Jan 23
5
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
AC CHARACTERISTICS VDD = 3.6 V; Tamb = 25 C; VGG1 = VGG2 = -1.8 V; measured on Philips demoboard. SYMBOL Power amplifier Pi fRF Po(max) Po(min) NRX H2 H3 Stab Note input power RF frequency range maximum output power efficiency minimum output power output noise in RX band 2nd harmonic level 3rd harmonic level stability note 1 Tamb = 25 C; VDD = 3.6 V Tamb = -20 to +85 C; VDD = 3 V VDD = 3.6 V VDD < 0.1 V fRF = 925 to 935 MHz at Po(max) fRF = 935 to 960 MHz at Po(max) -2 880 33.5 32 42 - - - - - - - - 35.5 - 52 -20 - - - - - PARAMETER CONDITIONS MIN. TYP.
CGY2013G
MAX.
UNIT
+2 915 - - - -15 -117 -125 -35 -35 -70
dBm MHz dBm dBm % dBm dBm/Hz dBm/Hz dBc dBc dBc
1. The device is adjusted to provide nominal value of load power into a 50 load. The device is switched off and a 6 : 1 load replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 second period.
1998 Jan 23
6
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
APPLICATION INFORMATION
CGY2013G
handbook, full pagewidth
Vbat 1.5 k
VDD
150 pF BSR14 Vcontrol 470 10 nF 39 pF 270 PHP212L 39 pF
100 pF
150 pF
27
47
3.3 nH 18 nH 18 nH 39 pF 100 pF output 2.7 pF 1.8 pF 12 pF CMS TDK 22 nH 100 10 nH input 1.8 pF 8.2 nH
CGY2013
47 VGG 39 pF
MGD629
All SMD size components are 0603.
Fig.3 Evaluation board schematic (FR4, 0.8 mm).
1998 Jan 23
7
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
CGY2013G
SOT313-2
c
y X
36 37
25 24 ZE
A
e
E HE
A A2
A1
(A 3) Lp L detail X
wM pin 1 index 48 1 12 ZD bp D HD wM B vM B vM A 13 bp
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT313-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.5 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
ISSUE DATE 94-12-19 97-08-01
1998 Jan 23
8
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
CGY2013G
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1998 Jan 23
9
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
CGY2013G
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 23
10
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
NOTES
CGY2013G
1998 Jan 23
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com/ps/ (1) CGY2013G_N_2 June 26, 1996 11:51 am SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
437027/1200/02/pp12
Date of release: 1998 Jan 23
Document order number:
9397 750 03166

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